Huang, C.-H.C.-H.HuangJENN-GWO HWU2018-09-102018-09-102001https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035439922&doi=10.1116%2f1.1403441&partnerID=40&md5=6bf1b5c0f7a94edbbc109d80b2d0cd7ehttp://scholars.lib.ntu.edu.tw/handle/123456789/292417The investigation of breakdown characteristics of ultrathin gate oxides was done in metal-oxide-semiconductor structure subjected to substrate injection by means of ramp-up and ramp-down current-voltage (I-V) measurements. There were three different modes of breakdown for substrate injection existing in I-V characteristics namely resistorlike, hysteresislike, and saturation. A study of related characteristics of the three modes was done and they exhibited oxide thickness dependence.Charge carriers; Current voltage characteristics; Electric breakdown; Electric conductivity; Substrates; Ultrathin gate oxides; ULSI circuitsBreakdown characteristics of ultrathin gate oxides (<4 nm) in metal-oxide-semiconductor structure subjected to substrate injectionjournal article10.1116/1.14034412-s2.0-0035439922