High-quality a-plane GaN grown with flow-rate modulation epitaxy on r-plane sapphire substrate

CHIH-CHUNG YANGHuang, J.-J.J.-J.HuangTang, T.-Y.T.-Y.TangHuang, C.-F.C.-F.HuangCHIH-CHUNG YANG2018-09-102018-09-102008http://www.scopus.com/inward/record.url?eid=2-s2.0-42749086595&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/338998High-quality a-plane GaN grown with flow-rate modulation epitaxy on r-plane sapphire substratejournal article10.1016/j.jcrysgro.2008.02.007