Optimum Ge profile design for base transit time minimization of SiGe HBT

Dept. of Electr. Eng., National Taiwan Univ.Chang, S.T.S.T.ChangLiu, C.W.C.W.LiuLin, C.H.C.H.Lin2007-04-192018-07-062007-04-192018-07-062001-12http://ntur.lib.ntu.edu.tw//handle/246246/2007041910021390application/pdf253629 bytesapplication/pdfen-USOptimum Ge profile design for base transit time minimization of SiGe HBTjournal article10.1109/APMC.2001.985632http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910021390/1/00985632.pdf