Photogalvanic effects for interband transition in p-Si0.5 Ge0.5 Si multiple quantum wells

CHIEH-HSIUNG KUANYANG-FANG CHENWei, C.M.C.M.WeiCho, K.S.K.S.ChoChen, Y.F.Y.F.ChenPeng, Y.H.Y.H.PengChiu, C.W.C.W.ChiuCHIEH-HSIUNG KUANYANG-FANG CHEN2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-37549018064&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/332054[SDGs]SDG7Photogalvanic effects for interband transition in p-Si0.5 Ge0.5 Si multiple quantum wellsjournal article10.1063/1.28255722-s2.0-37549018064