Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics

You, S.L.S.L.YouHuang, C.C.C.C.HuangWang, C.J.C.J.WangHo, H.C.H.C.HoKwo, J.J.KwoLee, W.C.W.C.LeeLee, K.Y.K.Y.LeeWu, Y.D.Y.D.WuLee, Y.J.Y.J.LeeMINGHWEI HONG2019-12-272019-12-272008https://scholars.lib.ntu.edu.tw/handle/123456789/443430Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectricsjournal article10.1063/1.28317172-s2.0-38049092424https://www.scopus.com/inward/record.uri?eid=2-s2.0-38049092424&doi=10.1063%2f1.2831717&partnerID=40&md5=ea01e9f4557b80d30b4b948d5414ca92