管傑雄臺灣大學：光電工程學研究所張輔琮Jhang, Fu-TsungFu-TsungJhang2007-11-252018-07-052007-11-252018-07-052004http://ntur.lib.ntu.edu.tw//handle/246246/50743With the development of novel semiconductor industry, the sizes of IC devices have been scaled down and the signal is very small during the transmission between these devices. For this reason, background limit performance (BLIP) of a photodetector is more important than the value of responsivity. Schottky contact functions as a large resistance with series connection to the structure of a SLIP, and response (means current in this thesis) of the SLIP is very small due to the low bias voltage applied to the active region. In this thesis, we use metal-semiconductor Schottky barrier to reduce the dark current and to provide a large resistance.英文摘要 I 中文摘要 II Table Captions…………………………………………………………3 Figure Captions…………………………………………………………4 Chapter 1: Introduction…………………………………………………………6 References……………………………………………………………………………8 Chapter 2: Ge Superlattice Infrared Photodetector with Schottky Barrier …………………………………………………………………9 2.1 Background of Infrared Photodetector…………………………………………9 (I) Blackbody radiation …………………………………………………………9 (II) Infrared Photodetector ………………………………………………………10 (a) Quantum Well and Superlattice Structure …………………………………10 (b) Superlattice Infrared Photodetector ………………………………………11 2.2 Sample Strucutre ………………………………………………………………13 2.3 Ge Superlattice Infrared Photodetector with a Schottky Contact ………………14 2.4 Figure of Merit …………………………………………………………………15 References …………………………………………………………………………19 Chapter 3: Fabrication Process of a Schottky Ge SLIP and Measurement Instrument Setup ……………………………………………………20 3.1 Device Process 1 ………………………………………………………………20 3.2 Device Process 2 ………………………………………………………………25 3.3 Characterization Measurements …………………………………………………28 1. Current-Voltage (I-V) …………………………………………………………28 2. Relative Spectral Response and Absolute Responsivity ……………………29 References …………………………………………………………………………39 Chapter 4: Experimental Results and Discussion …………………………40 4.1 The Perspective for Schottky Barrier on Ge Infrared Photodetector……………40 4.2 Current-Voltage Characteristics ………………………………………………41 (I) Mechanism of Dark Current Flowing through a Schottky Barrier …………41 (II) Current-Voltage Measurement ……………………………………………44 4.3 Responsivity and Detectivity ……………………………………………………47 References …………………………………………………………………………68 Chapter 5: Conclusion …………………………………………………………691212869 bytesapplication/pdfen-US暗電流蕭基接面超晶格背景限制溫度Dark currentsuperlatticeSchottky contactBackground Limited Performancethesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/50743/1/ntu-93-R91941020-1.pdf