JENN-GWO HWU2018-09-102018-09-102004https://www.scopus.com/inward/record.uri?eid=2-s2.0-4444254154&doi=10.1109%2fTED.2004.833571&partnerID=40&md5=83396319418c520c402809144ca6e002http://scholars.lib.ntu.edu.tw/handle/123456789/307547This paper examined the feasibility of applying a highly sensitive metal-oxide-semiconductor (MOS) tunneling temperature sensor, which was compatible with current CMOS technology. As the sensor was biased positively at a constant voltage, the gate current increased more than when the sensor was biased at a constant-current situation, its gate voltage magnitude changed significantly with substrate temperature, with a sensitivity exceeding -2 V/ °C. The improvement of temperature sensitivity in this paper is one thousand times over the sensitivity of a conventional p-n junction, i.e., namely, about -2 mV/ °C. Regarding a temperature sensor array, this paper proposes a method using gate current gain, rather than absolute gate current, to eliminate the gate current discrepancy among sensors. For constant current operation, a sensitivity exceeding 10 V/ °C can be obtained if the current level is suitable. Finally, this paper demonstrates a real temperature distribution for on-chip detection. With such a high temperature-sensitive sensor, accurate temperature detection can be incorporated into common CMOS circuits. © 2004 IEEE.Gate current; Temperature detection; Temperature sensitivity; Temperature sensor array; Tunneling temperature sensors; Arrays; CMOS integrated circuits; Electric currents; Electric potential; Integrated circuit layout; Semiconductor device structures; Semiconductor junctions; Sensors; Temperature distribution; Thermal effects; Tunnel diodes; MOS devicesjournal article10.1109/TED.2004.833571