2002-08-012024-05-16https://scholars.lib.ntu.edu.tw/handle/123456789/666827摘要：本計畫主要是發展奈米紅外線(1~30 μm)光源及偵測器元件為主。所謂奈米元件是指元件所侷限的載子空間已小至載子的德布洛依波長，因此可以利用載子波動特性所獨具的運動機制如穿隧效應來設計重要的電子及光學零組件。此方面的研究不但符合半導體科技的發展趨勢，有幾個領域我們的研究更是領先世界, 這不但為工業界在奈米及紅外線科技奠下基石，也可為學術教育提供一片學習天地。此外，紅外線的相關技術，在生物、醫學及通訊等方面都有極大的應用空間；尤其是針對1.3 ~1.55 μm 波長在光纖通訊上的應用，我們提出InAs/GaAs量子點雷射以及SiGe/Si高速元件及單晶光電積體電路為重點；針對1~12 μm 在夜視﹑環保、生態與生物細胞組織上的應用，我們提出結合能帶控制技術(band engineering)及奈米製程的III-V及IV-IV族化合物超晶格及碎能隙半導體雷射、發光二極體、量子點元件及紅外線偵測器為重點，並將其操作溫度提高到接近室溫的程度； 所以本計畫在紅外線研究領域上，兼具了科學性、技術性、應用性及教育性的整體考量。<br> Abstract: The primary goal of our project is to develop nanostructure infrared (1~300 μm) light sources and detectors, and explore their electronic and optical applications. The size of the nanostructure is less than the de Broglie wavelength of the carriers in the devices, therefore, many quantum wave properties of the carriers such as tunneling phenomena can be utilized to fabricate important optoelectronic devices. Our capability in this technology is synchronous with the advancement of the world leading semiconductor groups and in some areas we even lead in the race. This area may become the important part of the semiconductor industry in Taiwan in the future. Besides, lots of theoretical principles are involved in the design of the advanced devices, our project provides the foundation for the graduate students to learn the fundamental physics of nano and high speed devices. Since the infrared technology has broad applications, our project puts effort to deal with the applications especially in the communication, biology, and medical science. For the 1.3~1.55 μm wavelength applications in the intra-wafer optical link and optical fiber communication, InAs/GaAs quantum dot lasers and SiGe/Si CMOS light source and photodetector with their monolithic integration will be developed for the future need in the semiconductor industry. For the application of the 1~12 μm radiation in the night vision and environmental protection, the techniques in the III-V and IV-IV semiconductors combined with the band engineering theory are utilized to fabricate light emitting diodes, laser diodes, and photodetectors to meet the diverse needs in wavelength. In brief, our project has taken into account not only the researches in the science, technology, and application but also the educational value.中紅外線量子點光偵測器發光二極體光偵測器超晶格紅外線偵測器應變工程雙波長雷射分子束磊晶砷離子佈植砷化鎵矽光電矽鍺合金矽化碳鍺Mid-infraredQuantum dot infrared photodetectorlight emitting diodesphotodetectorstrain engineeringSuperlattice infrared photodetectorSi optoelectronicssilicon germanium alloysilicon Germanium carbide