Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectrics

Chang, YCYCChangChang, WHWHChangChiu, HCHCChiuShiu, KHKHShiuLee, CHCHLeeMINGHWEI HONGKwo, JJKwoHong, JMJMHongTsai, CCCCTsai2018-09-102018-09-102008http://scholars.lib.ntu.edu.tw/handle/123456789/340121Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectricsbook part