Experimental demonstration for the implant-free In<inf>0.53</inf>Ga <inf>0.47</inf>As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistance

Liao, M.-H.M.-H.LiaoChang, L.C.L.C.ChangMING-HAN LIAO2020-01-132020-01-132013https://scholars.lib.ntu.edu.tw/handle/123456789/447966Experimental demonstration for the implant-free In<inf>0.53</inf>Ga <inf>0.47</inf>As quantum-well metal-insulator-semiconductor field-effect transistors with ultra-low source/drain resistancejournal article10.1063/1.48138812-s2.0-84882356914https://www.scopus.com/inward/record.uri?eid=2-s2.0-84882356914&doi=10.1063%2f1.4813881&partnerID=40&md5=824a7a5e1e607927d76e8d8140ab6358