Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor Deposition

Tsai, C.-E.C.-E.TsaiLu, F.-L.F.-L.LuLiu, Y.-C.Y.-C.LiuYe, H.-Y.H.-Y.YeCHEE-WEE LIU2021-02-222021-02-222020https://www.scopus.com/inward/record.url?eid=2-s2.0-85095721235&partnerID=40&md5=25146643870054e775f0088169c455fdhttps://scholars.lib.ntu.edu.tw/handle/123456789/549175Low Contact Resistivity to Ge Using In-Situ B and Sn Incorporation by Chemical Vapor Depositionjournal article10.1109/TED.2020.30199772-s2.0-85095721235