Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy

Passlack, MMPasslackMINGHWEI HONGMannaerts, JPJPMannaertsKwo, JRJRKwoTu, LWLWTu2018-09-102018-09-101996http://scholars.lib.ntu.edu.tw/handle/123456789/323230[SDGs]SDG9Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxyjournal article10.1063/1.1166522-s2.0-0142108602