Chang, Y.C.Y.C.ChangHuang, M.L.M.L.HuangLee, K.Y.K.Y.LeeLee, Y.J.Y.J.LeeLin, T.D.T.D.LinMINGHWEI HONGKwo, J.J.KwoLay, T.S.T.S.LayLiao, C.C.C.C.LiaoCheng, K.Y.K.Y.Cheng2019-12-272019-12-272008https://scholars.lib.ntu.edu.tw/handle/123456789/443427Atomic-layer-deposited high κ dielectric HfO2 films on air-exposed In0.53Ga0.47As∕InP (100), using Hf(NCH3C2H5)4 and H2O as the precursors, were found to have an atomically sharp interface free of arsenic oxides, an important aspect for Fermi level unpinning. A careful and thorough probing, using high-resolution angular-resolved x-ray photoelectron spectroscopy (XPS) with synchrotron radiation, however, observed the existence of Ga2O3, In2O3, and In(OH)3 at the interface. The current transport of the metal-oxide-semiconductor capacitor for an oxide 7.8nm thick follows the Fowler–Nordheim tunneling mechanism and shows a low leakage current density of ∼10−8A∕cm2 at VFB+1V. Well behaved frequency-varying capacitance-voltage curves were measured and an interfacial density of states of 2×1012cm−2eV−1 was derived. A conduction-band offset of 1.8±0.1eV and a valence-band offset of 2.9±0.1eV have been determined using the current transport data and XPS, respectively.[SDGs]SDG7journal article10.1063/1.28839672-s2.0-39749137699https://www.scopus.com/inward/record.uri?eid=2-s2.0-39749137699&doi=10.1063%2f1.2883967&partnerID=40&md5=963759117d7797a3de8a2b7e928a8d60