Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters

Chang, Y.C.Y.C.ChangHuang, M.L.M.L.HuangLee, K.Y.K.Y.LeeLee, Y.J.Y.J.LeeLin, T.D.T.D.LinMINGHWEI HONGKwo, J.J.KwoLay, T.S.T.S.LayLiao, C.C.C.C.LiaoCheng, K.Y.K.Y.Cheng2019-12-272019-12-272008https://scholars.lib.ntu.edu.tw/handle/123456789/443427Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parametersjournal article10.1063/1.28839672-s2.0-39749137699https://www.scopus.com/inward/record.uri?eid=2-s2.0-39749137699&doi=10.1063%2f1.2883967&partnerID=40&md5=963759117d7797a3de8a2b7e928a8d60