Hong S.-HAfraj S.NHuang P.-YYeh Y.-ZSHIH-HUANG TUNGChen M.-CCHENG-LIANG LIU2022-03-222022-03-22202120403364https://www.scopus.com/inward/record.uri?eid=2-s2.0-85121671966&doi=10.1039%2fd1nr07084c&partnerID=40&md5=ffd954186eb4cf35d110bbc79f79d526https://scholars.lib.ntu.edu.tw/handle/123456789/598343Low-dimensional all-inorganic perovskite quantum dots (QDs) have been increasingly developed as photo-sensing materials in the field of photodetectors because of their strong light-absorption capability and broad bandgap tunability. Here, solution-processed hybrid phototransistors built by a dithienothiophenoquinoid (DTTQ) n-type organic semiconductor transport channel mixing with a colloidal CsPbBr3 perovskite QD photosensitizer are demonstrated by manipulating the relative volume ratio from 10 : 0 to 9 : 1, 7 : 3, 5 : 5, 3 : 7, 1 : 9, and 0 : 10. This results in a significantly enhanced photodetection performance owing to the advantages of a high UV absorption cross-section based on the perovskite QDs, efficient carrier transport abilities from the DTTQ semiconductor, and the photogating effect between the bulk heterojunction photocarrier transfer interfaces. The optimized DTTQ : QD (3 : 7) hybrid phototransistor achieves a high photoresponsivity (R) of 7.1 × 105 A W-1, a photosensitivity (S) of 1.8 × 104, and a photodetectivity (D) of 3.6 × 1013 Jones at 365 nm. Such a solution-based fabrication process using a hybrid approach directly integrated into a sensitized phototransistor potentially holds promising photoelectric applications towards advanced light-stimulated photodetection. ? 2021 The Royal Society of Chemistry.Bromine compoundsHeterojunctionsLead compoundsLight absorptionNanocrystalsPerovskitePhotodetectorsPhotoelectricityPhotosensitizersPhototransistorsAbsorption capabilityInorganicsLow dimensionalN-type organic semiconductorPhoto detectionPhotosensitiserSemiconductor transportSensing materialSolution-processedTunabilitiesSemiconductor quantum dotsPhotoelectric effect of hybrid ultraviolet-sensitized phototransistors from an n-type organic semiconductor and an all-inorganic perovskite quantum dot photosensitizerjournal article10.1039/d1nr07084c348544482-s2.0-85121671966