Li, Meng-ZhanMeng-ZhanLiHung, Terry Y. T.Terry Y. T.HungYun, Wei-ShengWei-ShengYunSathaiya, D. MahaveerD. MahaveerSathaiyaChou, Sui-AnSui-AnChouLiew, San LinSan LinLiewYang, Ying-MeiYing-MeiYangLin, Kuang-IKuang-ILinLee, Tung-YingTung-YingLeeCheng, Chao-ChingChao-ChingChengWu, Chung-ChengChung-ChengWuRadu, Iuliana P.Iuliana P.RaduLin, Minn-TsongMinn-TsongLin2025-08-062025-08-062025-04-15https://scholars.lib.ntu.edu.tw/handle/123456789/731057WOx conversion for doping is highlighted in recent advancements in WSe2 p-FETs. While past studies focused on exfoliated WSe2 flakes, our research examines CVD-grown WSe2 films, assessing the impact of this doping on channel mobility and contact resistance in devices. Our approach enables effective threshold voltage tuning in both n- and p-type FETs with various low-dimensional material channels with the doping mechanism well captured by TCAD simulations. When applied to WSe2, trilayer devices exhibited a good and comparable median field-effect mobility of 65 cm2/V·s following the conversion process. Consequently, trilayer WSe2 was used to demonstrate top-gated p-MOSFETs via self-aligned WOx conversion in the spacer region, achieving a 250-fold enhancement in the on-current while maintaining a subthreshold swing of 80 mV/dec. Our findings provide a comprehensive understanding of WOx conversion and its general applicability, paving the way for its use in future logic devices with low-dimensional materials.converted tungsten oxidelow-dimensional materialsMOSFETp-dopingself-alignedWSe2journal article10.1021/acs.nanolett.5c00813