Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectric

Yang, B.B.YangYe, P.D.P.D.YeKwo, J.J.KwoFrei, M.R.M.R.FreiGossmann, H.-J.L.H.-J.L.GossmannMannaerts, J.P.J.P.MannaertsSergent, M.M.SergentMINGHWEI HONGNg, K.K.NgBude, J.J.Bude2019-12-272019-12-2710.1016/S0022-0248(02)02273-Xhttps://scholars.lib.ntu.edu.tw/handle/123456789/443466Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as gate dielectricconference paper2-s2.0-0037380619https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037380619&doi=10.1016%2fS0022-0248%2802%2902273-X&partnerID=40&md5=8145afa228669ecf5498be0a1c07ae24