A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with averaged SS of 28 mV/decade

Shih, P.-C.P.-C.ShihHuang, H.-C.H.-C.HuangWang, C.-A.C.-A.WangJIUN-YUN LI2020-06-112020-06-112017https://scholars.lib.ntu.edu.tw/handle/123456789/498465A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with averaged SS of 28 mV/decadeconference paper10.23919/SNW.2017.82422912-s2.0-85051043616https://www.scopus.com/inward/record.uri?eid=2-s2.0-85051043616&doi=10.23919%2fSNW.2017.8242291&partnerID=40&md5=307fe5cdb493c3e7d6c20230f62a64c8