Correction to "Janus γ-GeSSe Monolayer as a High-Performance Material for Photocatalysis and Thermoelectricity"

van Thanh, VuongVuongvan Thanhvan Truong, DoDovan TruongTUAN HUNG NGUYEN2025-09-242025-09-242023https://www.scopus.com/inward/record.uri?eid=2-s2.0-85147109633&doi=10.1021%2Facsaem.3c00089&partnerID=40&md5=2aba872b481915f9ca370bcb192ae1e3https://scholars.lib.ntu.edu.tw/handle/123456789/732343The material "γ-GeSSe" written in the Article should be "Ge2SSe" since the unit cell contains two Ge atoms, one S atom, and one Se atom. This Correction relates to the name of the material in the Title and Article, and the title of this Correction contains the corrected formula. However, this Correction does not affect anything in the results, discussions, and conclusions of the Article. The authors apologize for any inconvenience caused.Correction to "Janus γ-GeSSe Monolayer as a High-Performance Material for Photocatalysis and Thermoelectricity"corrigendum10.1021/acsaem.3c000892-s2.0-85147109633