Han, H.-C.H.-C.HanChong, C.-W.C.-W.ChongWang, S.-B.S.-B.WangHeh, D.D.HehTseng, C.-A.C.-A.TsengHuang, Y.-F.Y.-F.HuangChattopadhyay, S.S.ChattopadhyayChen, K.-H.K.-H.ChenLin, C.-F.C.-F.LinJIUN-HAW LEELI-CHYONG CHEN2020-06-182020-06-18201315306984https://www.scopus.com/inward/record.uri?eid=2-s2.0-84876054060&doi=10.1021%2fnl304303p&partnerID=40&md5=0d7d5b7ef741edaff3663426c9c99495A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ∼300 μF cm -2 is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al 2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (∼5 × 1010 cm-2) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials. © 2013 American Chemical Society.equivalent planar capacitance; nanophase; silicon nanotip array; supercapacitors; Zinc oxidejournal article10.1021/nl304303p234325772-s2.0-84876054060