Ruei-Ci WuKUNG-YEN LEEPei-Chun Liao2025-01-212025-01-21202407413106https://www.scopus.com/record/display.uri?eid=2-s2.0-85213686318&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/725023This study demonstrates the corresponding voltages to the abrupt drops in the C-V curves of the planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and junction barrier Schottky (JBS) diodes without the P-pillar beneath the P-type region can be adjusted by designing the concentrations and structures of P-type regions, N-type junction field-effect transistor (JFET) regions, and N-type drift regions. When the concentrations of the upper N-type regions are much higher than those of the lower N-type regions and the widths are narrower than those of the N-type region beneath, both the C-V curves of MOSFETs and JBS diodes show abrupt drops. From the measured results, the abrupt drop of the JBS diode becomes relatively steep and obvious when the concentration of the upper N-type region is 5 times higher than that of the lower N-type region in this study. The simulation results of the MOSFETs with multiple (equal to or more than 3) P- and N-type regions also demonstrate the multiple abrupt drops in the C-V curve under the above-mentioned conditions. The critical values of the concentrations and widths are decided in this study only. Additionally, the measured and simulated switching waveforms show when the Vds corresponding to the abrupt drop decreases, the reverse recovery time (trr) is shortened, and turn-on energy loss (Eon) may be reduced.false4H-SiCC-VDeep PbaseDrain to source capacitanceMOSFETOutput capacitance[SDGs]SDG7journal article10.1109/LED.2024.35222782-s2.0-85213686318