Gate Oxide Local Thinning Mechanism Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor

C.F.YangP.J.ChenW.C.ChenK.W.LinJ.G.HwuJENN-GWO HWU2019-10-312019-10-312019189383https://scholars.lib.ntu.edu.tw/handle/123456789/429146Gate Oxide Local Thinning Mechanism Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistorjournal article10.1109/ted.2018.28796542-s2.0-85057188985