Silicon-germanium spherical quantum dot infrared photodetectors prepared by the combination of bottom-up and top-down technologies

TAI-CHIA LINSI-CHEN LEECheng, H. H.H. H.Cheng2019-10-282019-10-28200410711023https://scholars.lib.ntu.edu.tw/handle/123456789/428557Alumina; Electron energy levels; Evaporation; Ionization; Methanol; Molecular beam epitaxy; Reactive ion etching; Semiconducting germanium; Semiconducting silicon; Semiconductor quantum dots; Synthesis (chemical); Transmission electron microscopy; Quantum dot infrared photodetectors (QDIP); Thermal evaporation; Ultrasonic bath; Infrared detectorsSilicon-germanium spherical quantum dot infrared photodetectors prepared by the combination of bottom-up and top-down technologiesjournal article10.1116/1.1641059WOS:000220573800024