Metal-oxide-semiconductor devices with UHV-Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on Ge(100)

Chu, L.K.L.K.ChuLin, T.D.T.D.LinLee, C.H.C.H.LeeTung, L.T.L.T.TungLee, W.C.W.C.LeeChu, R.L.R.L.ChuChang, C.C.C.C.ChangMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443396Metal-oxide-semiconductor devices with UHV-Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on Ge(100)conference paper10.1109/VTSA.2009.51593282-s2.0-77950123954https://www.scopus.com/inward/record.uri?eid=2-s2.0-77950123954&doi=10.1109%2fVTSA.2009.5159328&partnerID=40&md5=94e1007663c39dc80bca8b260286e02d