Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric

Yang, BBYangYe, PDPDYeKwo, JJKwoFrei, MRMRFreiGossmann, H-JLH-JLGossmannMannaerts, JPJPMannaertsSergent, MMSergentMINGHWEI HONGNg, KKNgBude, JJBude2018-09-102018-09-102003http://scholars.lib.ntu.edu.tw/handle/123456789/302779Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectricjournal article