電機資訊學院: 電子工程學研究所指導教授: 劉深淵薛文杰Hsueh, RogerRogerHsueh2017-03-062018-07-102017-03-062018-07-102016http://ntur.lib.ntu.edu.tw//handle/246246/276218這篇論文的主題主要為利用不同型態且閘極氧化層厚度的電晶體，來實做極低功率低溫度係數的電流源和曲度電流源，使得振盪器有低溫度係數，並以不同的電晶體長度來避免製程變易讓電流源失效，以此電流源在0.18-μm CMOS的製程中，完成了振盪頻率為41kHz和1.15MHz的兩個振盪器。1.15MHz的震盪器中，使用了雙相位的架構，並使用高密度的N-well 電阻來降低晶片面積。 41kHz的振盪器中，在0.6伏特的供給電壓下，消耗功率為11.3nW，在-20~80°C平均的量測溫度係數為92.8ppm/°C 計算的第一優值和第二優值分別為125.6dB 和95dB。1.15MHz的振盪器中，在0.8伏特的供給電壓下，消耗功率為580nW，在-20~80°C平均的量測溫度係數為551.5ppm/°C 計算的第一優值和第二優值分別為123dB 和 92dB。A low-power low-TC current source and a piecewise current source are presented by using NMOS transistors with different oxide thicknesses and channel lengths. Two oscillators of 41kHz and 1.15MHz are fabricated in a 0.18-μm CMOS process. Dual-phase cross-coupled structure is used to replace current starving clock buffers which cause considerable power. Furthermore, a high density N-well STI resistor is used to decrease the chip area. For the 41kHz oscillator, its power consumption is 11.3nW with a supply voltage of 0.6V. The average temperature coefficient is 92.8ppm/°C for the temperature of -20~80°C. The calculated power FOM1 and FOM2 are 125.6dB and 95dB. For the 1.15MHz oscillator, its power consumption is 580nW with a supply voltage of 0.8V. The average temperature coefficient is 551.5ppm/°C for the temperature of -20~80°C. The calculated power FOM1 and FOM2 are 123dB and 92dB.論文使用權限: 不同意授權極低功率弛張震盪器溫度補償次臨界區Ultra-low powerrelaxation oscillatorsubthresholdtemperature coefficient (TC).thesis10.6342/NTU201602233