Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO<inf>2</inf> as a gate dielectric

Chang, Y.C.Y.C.ChangChang, W.H.W.H.ChangChang, Y.H.Y.H.ChangKwo, J.J.KwoLin, Y.S.Y.S.LinHsu, S.H.S.H.HsuHong, J.M.J.M.HongTsai, C.C.C.C.TsaiMINGHWEI HONG2019-12-272019-12-272010https://scholars.lib.ntu.edu.tw/handle/123456789/443380[SDGs]SDG7Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO<inf>2</inf> as a gate dielectricjournal article10.1016/j.mee.2010.02.0132-s2.0-77955510311https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955510311&doi=10.1016%2fj.mee.2010.02.013&partnerID=40&md5=d9a3f0ce597ca0e59bd3fbe1fd0281e1