Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displays

I-CHUN CHENG2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-34548068362&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/332096Amorphous silicon thin-film transistor backplanes deposited at 200 °C on clear plastic for lamination to electrophoretic displaysjournal article10.1109/JDT.2007.900935