Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric

Lee, KYKYLeeChang, PPChangChang, YCYCChangHuang, MLMLHuangLee, YJYJLeeMINGHWEI HONGKwo, JJKwo2018-09-102018-09-102008http://scholars.lib.ntu.edu.tw/handle/123456789/340132Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectricbook part