2020-08-012024-05-14https://scholars.lib.ntu.edu.tw/handle/123456789/660129摘要：在這項研究計畫中，我們預計使用化學氣相沉積（CVD）方法來生長高質量的奈 米碳管（CNT），並在三維積體電路（3DIC）系統中用此作矽穿孔（TSV）電訊 號的連接材料, 預計充分利用其高電與熱傳導的材料特性, 根據電流電壓（I-V）測 量，我們生長的CNT的電阻率非常低。並且成功驗證所提出的3DIC製作流程，展 示了兩個不同的Si元件之間的垂直電訊號連接。與其他人的工作相比，我們開發的 3D封裝系統中的連接電阻非常的低與有競爭力。同時我們也系統地研究了不同的 鍵合材料（銦與錫）和鍵合時間，並對3D封裝進行了進一步最佳化。這項研究計 畫預計為高性能和高密度3D元件封裝提供了有用的解決方案。 <br> Abstract: In this work, the high-quality Carbon Nano-Tubes (CNTs) is grown by chemical vapor deposition (CVD) method and used as a Through Silicon Vias (TSV) material in the three-dimensional integrated circuit (3DIC) system. Based on the Current-Voltage (I-V) measurements, the Resistivity of our grown CNTs is very low. With the proposed 3DIC process flow, the vertically electrical connection between two different Si devices is demonstrated successfully. The connection resistance in our full 3D system is very promising, compared with other’s work. The different bonding materials (In versus Sn) and bonding times are also investigated systemically and furtherly optimized. This work provides a useful solution for the future electrical connection in the high-performance and highdense 3D integrated devices.三維封裝半導體奈米碳管3D Package TechnologySemiconductor IndustryCarbon-Nano Tube