Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN

Li, SongSongLiJYH PIN CHOUHu, AliceAliceHuPlenio, Martin B.Martin B.PlenioUdvarhelyi, PéterPéterUdvarhelyiThiering, GergőGergőThieringAbdi, MehdiMehdiAbdiGali, AdamAdamGali2024-09-182024-09-182020https://www.scopus.com/record/display.uri?eid=2-s2.0-85091587939&origin=resultslisthttps://scholars.lib.ntu.edu.tw/handle/123456789/721366Article number 85We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride (h-BN), a color center that may be employed as a quantum bit in a two-dimensional material. With group theory and ab initio analysis we show that strong electron–phonon coupling plays a key role in the optical activation of this color center. We find a giant shift on the zero-phonon-line (ZPL) emission of the nitrogen antisite-vacancy pair defect upon applying strain that is typical of h-BN samples. Our results provide a plausible explanation for the experimental observation of quantum emitters with similar optical properties but widely scattered ZPL wavelengths and the experimentally observed dependence of the ZPL on the strain. © 2020, The Author(s).Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BNjournal article10.1038/s41534-020-00312-y2-s2.0-85091587939