Qwah K.SRobertson C.AWu Y.-RSpeck J.S.YUH-RENN WU2021-09-022021-09-02202102681242https://www.scopus.com/inward/record.uri?eid=2-s2.0-85107667254&doi=10.1088%2f1361-6641%2fabfdfc&partnerID=40&md5=9f8adec8e9a2c3b12e881e1b95ecd83bhttps://scholars.lib.ntu.edu.tw/handle/123456789/581265Finite element analysis software was used to model and visualize two p-n junction models: one with a single threading dislocation (TD) and a control without one. TDs are modeled as a Gaussian distribution of trap states with a full width at half maximum value of 5 nm localized around the r = 0 line in a cylindrical coordination such that the linear trap state density was 1 trap c-1-translation; this model allows the cylindrical symmetry of the c-plane GaN crystal orientation to be used to avoid more computationally intensive 3D models. In this work, a vertical p-n diode with typical doping characteristics and an equivalent threading dislocation density of 108 cm2 was modeled in reverse bias. Our simulations show that the dislocation-mediated leakage mechanism for reverse bias leakage in GaN p-n diodes is the generation of electron-hole pairs via a trap-assisted tunneling mechanism whereby electrons from the valence band use the intermediate trap state to traverse the band gap. This mechanism results in electron-hole pairs that are swept out of the junction by the reverse bias electric field. This behavior results in a measurable leakage current within the model with behavior consistent with experimental values. ? 2021 IOP Publishing Ltd.Crystal orientation; Crystal symmetry; Diodes; Electric fields; Energy gap; III-V semiconductors; Semiconductor junctions; Cylindrical symmetry; Electron hole pairs; Experimental values; Finite element analysis software; Threading dislocation; Threading dislocation densities; Trap assisted tunneling; Trap state density; Gallium nitridejournal article10.1088/1361-6641/abfdfc2-s2.0-85107667254