Hirayama YSmet J.HLUNG-HAN PENGFonstad C.GIppen E.P.2023-06-092023-06-091994214922https://www.scopus.com/inward/record.uri?eid=2-s2.0-0028259385&doi=10.1143%2fJJAP.33.890&partnerID=40&md5=a600a53ca2cf04b26933d9e578bc8c50https://scholars.lib.ntu.edu.tw/handle/123456789/632400We propose to use 1.55 μm intersubband transitions as a key mechanism for novel photonic devices such as fast photonic switches which are applicable to current optical communication systems. The calculation of carrier relaxation times shows a few picosecond switching time for 1.55 μm intersubband transitions. The well-width dependence of intersubband transition energies in InGaAs/AlAs pseudomorphic quantum well structures has been studied to realize 1.55 μm intersubband transitions. © 1994 Japanese Journal of Applied Physics. All rights reserved.Carrier relaxation time; Intersubband transition; Optical communication system; Photonic switch; Pseudomorphic quantum wellBand structure; Charge carriers; Electron transitions; Nonlinear optics; Optical communication; Relaxation processes; Semiconducting aluminum compounds; Semiconducting indium compounds; Semiconductor device structures; Semiconductor quantum wells; Switching; Ultrafast phenomena; Carrier relaxation time; Indium gallium arsenide/aluminum arsenide; Intersubband transitions; Optical communication systems; Optical nonlinearity; Photonic devices; Pseudomorphic quantum well structures; Optical switchesjournal article10.1143/JJAP.33.8902-s2.0-0028259385