A velocity-overshoot capacitance model for 0.1 μm MOS transistors

Kuo, J. B.J. B.KuoChang, Y. W.Y. W.ChangLai, C. S.C. S.LaiKuoJB2009-02-252018-07-062009-02-252018-07-061996http://ntur.lib.ntu.edu.tw//handle/246246/141213application/pdf527286 bytesapplication/pdfen-USA velocity-overshoot capacitance model for 0.1 μm MOS transistorsjournal articlehttp://ntur.lib.ntu.edu.tw/bitstream/246246/141213/1/02.pdf