王暉Wang, Huei臺灣大學:電信工程學研究所賴瑞彬Lai, Ruei-BinRuei-BinLai2010-07-012018-07-052010-07-012018-07-052009U0001-2307200912140100http://ntur.lib.ntu.edu.tw//handle/246246/188279本論文包含毫米波單刀雙擲切換器、多埠切換器與中等功率放大器的研究。論文的第一部分說明射頻切換器的基本概念，進而展示兩個使用互補式金屬氧化半導體(CMOS)製程的毫米波單刀雙擲切換器。這兩個毫米波單刀雙擲切換器是使用濾波器整合的方式來設計。使用濾波器的方式來設計，不但可使切換器的濾波效果更顯著，也可以提升阻抗匹配以及較好的隔離度。使用互補式金屬氧化半導體製程是現今整合系統於晶片上的趨勢。本論文中的第一個單刀雙擲切換器使用65奈米CMOS製程，在40到80 GHz的頻率之間，其置入損耗的量測值在3至5 dB之間，而隔離度則優於20 dB。另一個單刀雙擲切換器係使用90奈米的CMOS製程製作，在60到110 GHz的頻率之間，其置入損耗的量測值在3至4 dB之間，而隔離度則優於25 dB；就我們所知，後者是目前最高頻的CMOS切換器。論文的第二部份提出一個方法去分析毫米波多埠切換器的架構。這個分析方法是將多埠切換器架構中的通道路徑做一個簡化模型來做數學分析，而此簡化模型也適用於分析任一種多埠切換器架構。本論文實現了兩個使用砷化鎵高速場效電晶體(GaAs HEMT) 60 GHz的多埠切換器來驗證此分析方法。實驗結果與分析相當吻合。三部份首先介紹微波功率放大器的基本設計步驟，然後研製了一個使用65奈米CMOS的60 GHz 中等功率放大器。此60 GHz功率放大器的最高增益為14.5 dB而飽和功率則為9.5 dBm.This thesis includes the design of millimeter-wave SPDT switches, multiple-port switches, and a medium power amplifier.he first part of the thesis focuses on the basics about how to design RF switches, and then demonstrates two MMW SPDT switches in CMOS process. These two MMW SPDT switches were designed by filter-integrated method. To integrate a switch with filter response can get sharper frequency response and enhance isolation. The CMOS process was adopted since the system on chip (SoC) is a trend in CMOS. One SPDT switch was designed in 65 nm CMOS, and it has an insertion loss about 3-4.5 dB and an isolation better than 20 dB in 40-80 GHz. The other SPDT switch was designed in 90 nm CMOS, and it has an insertion loss of 3-4 dB and isolation better than 25 dB in 60-110 GHz. To our knowledge, it is the highest frequency CMOS MMIC switch.he second part presents a new method to analyze the topology of MMW multiple-port switches. The proposed method is suitable to analyze arbitrary multiple-port switch topology. This method is based on a simplified model of a through path of a multiple-port switch topology. Two 60 GHz multiple-port switches in GaAs HEMT process are demonstrated to verify this analysis. Good agreement with the analysis and the measured results are achieved. he third part presents a 60-GHz medium power amplifier in 65 nm CMOS process. This PA demonstrates a peak gain of 14.5 dB and saturation power of 9.5 dBm.Chapter 1 Introduction 1.1 Motivation 1.2 Literature Survey 2.2.1 Radio Frequency Switches 2.2.2 Millimeter-Wave Power Amplifiers 4.3 Contributions 4.4 Organization of the Thesis 6hapter 2 Basics of Radio Frequency Switches 8.1 Introduction 8.2 Series-Shunt Switches 10.3 Resonant-type Switches 12.4 Distributed Switches 14hapter 3 Millimeter-Wave Filter-Integrated SPDT Switch 16.1 Introduction 16.2 Basic Concepts of Filter-Integrated Switches 16.2.1 Synthesis of Microwave Filters 16.2.2 Transmission Line Integrated Filters 19.2.3 Filter-Integrated Switches 21.3 Circuit Implementation of V-band Filter-Integrated SPDT Switch in 65 nm CMOS Process 22.4 Experimental Results of V-Band SPDT Switch in 65 nm CMOS 30.5 Circuit Implementation of 60 to 110 GHz SPDT Switch in 90 nm CMOS 35.6 Experimental Results of 60 to 110 GHz SPDT Switch in 90 nm CMOS 38.7 Summary 42hapter 4 Topology Analysis of Millimeter -Wave Multiple-Port Switches 44.1 Introduction 44.2 Introduction to Different Type Multiple-Port Topologies 45.3 Analytical Derivation of Insertion Loss of Multiple-Port Topologies 46.4 Analytical Derivation of Bandwidth of Multiple-Port Topologies 54.5 Isolations of Multiple-Port Topologies 57.6 Summary of Topology Analysis 57hapter 5 Design of Millimeter-Wave Multiple-Port Switches 59.1 Introduction to MMIC Process 59.2 Design of Unit Switch Cells 60.3 Millimeter-Wave Multiple-Port Switches Design 62.4 Experimental Results 65.5 Summary of Multiple-Port Switches 74hapter 6 V-band Medium Power Amplifier 76.1 Introduction 76.2 Basic Concepts of Power Amplifiers [45] 77.3 Design of V-band Medium Power Amplifier 79.4 Experimental Results 84.5 Summary 88hapter 7 Conclusions 90eferences 91ublication List 974769021 bytesapplication/pdfen-US毫米波單刀雙擲多埠切換器功率放大器MMWSPDTmultiple-portswitchPAthesishttp://ntur.lib.ntu.edu.tw/bitstream/246246/188279/1/ntu-98-R96942008-1.pdf