A Compact Threshold Voltage Model for Gate Misalignment Effect of DG FD SOI NMOS Devices Considering Fringing Electric Field Effects

E. C. SunJ. B. KuoJAMES-B KUO2018-09-102018-09-102004-04http://scholars.lib.ntu.edu.tw/handle/123456789/310511[SDGs]SDG7A Compact Threshold Voltage Model for Gate Misalignment Effect of DG FD SOI NMOS Devices Considering Fringing Electric Field Effectsjournal article10.1109/TED.2004.8251082-s2.0-1942454330WOS:000220458000011