2015-01-012024-05-16https://scholars.lib.ntu.edu.tw/handle/123456789/668619摘要：擬利用週期性極化反轉鈮酸鋰基板，搭配石墨還原氧化鎵與高溫氨化處理法之氮化鎵沉積，研究週期性極化反轉氮化鎵/鈮酸鋰結構之製備與非線性/線性光學特徵。其具體實施方案如下 1.以射頻濺鍍法沉積氧化鎵於鈮酸鋰基板上; 2.塗佈石墨烯薄膜於步驟1所述基板; 3.高溫氨化於步驟2所述基板; 4.利用XPS, TEM, ellipsometry等技術分析薄膜化學組成與結晶/結構，以及線性光學係數。 5.對上述步驟進行優化，並發展氮化鎵極化場量之極性交錯反轉排列之生長模式。 <br> Abstract: A plan was made to combine the techniques of periodically poled lithium niobate PPLN substrate with the reduction-grown GaN to realize the device structure of periodically inverted GaN. The subjectes to be investigated are as follows: 1.use RF sputter to deposit Ga2O3 on LiNbO3 substrates 2.deposit graphene on the Ga2O3/LiNbO3 substrate developed in step 1. 3.high temperature treatment of template formed in step 2 with NH3 4.use XPS, TEM, ellipsometry to analyze the material composition, micro-structure and dielectric constant of the GaN/LiNbO3 hetro-structure. 5.optimization of the above steps and growth parameters for realization of periodically inverted GaN thick films.週期性極化反轉氮化鎵periodically inverted GaN