Chen, Ying ChuanYing ChuanChenChao, Yu TingYu TingChaoChen, EdwardEdwardChenCHAO-HSIN WUYUH-RENN WU2023-10-262023-10-262023-09-012475-9953https://scholars.lib.ntu.edu.tw/handle/123456789/636612Resistive memory based on two-dimensional (2D) tungsten disulfide (WS2), molybdenum disulfide (MoS2), and hexagonal boron nitride (h-BN) materials is studied via experiments and simulations. The influence of the active layer thicknesses is discussed, and the thickness with the best on/off ratio is found for 2D resistive random-access memory (RRAM). This work reveals fundamental differences between a 2D RRAM and conventional oxide RRAM. Furthermore, the physical parameters extracted using the kinetic Monte Carlo (KMC) model indicate that 2D materials have a lower diffusion activation energy along the vertical direction, where a smaller bias voltage and a shorter switching time can be achieved. The diffusion activation energy from the chemical vapor deposition (CVD)-grown sample is much lower than for mechanically exfoliated samples. The results suggest that MoS2 has the fastest switching speed among the three considered 2D materials.Physics - Materials Science; Physics - Materials Science; physics.app-ph; Physics - Computational Physicsjournal article10.1103/PhysRevMaterials.7.0940012-s2.0-85173018529https://api.elsevier.com/content/abstract/scopus_id/85173018529