Chen L.C.Wu C.T.Wen C.-Y.Wu J.-J.Liu W.T.Liu C.W.LI-CHYONG CHEN2022-08-092022-08-09200002729172https://www.scopus.com/inward/record.uri?eid=2-s2.0-0034505573&partnerID=40&md5=debc67ce64523dd87de369fc99fb8479https://scholars.lib.ntu.edu.tw/handle/123456789/616433Dielectric layers of thin silicon carbon nitride (SiCxNy) films have been prepared by ion beam sputtering deposition (IBD). For submicron metal-insulator-Si (MIS) based device applications, a dielectric of low interface roughness, increased capacitance/area with lower leakage on decreasing scale is highly desirable. We address these aspects for the IBD SiCxNy films on p-type Si and present their structural, optical and electrical characteristics as a function of the deposition conditions. Ultraviolet-visible transmittance and spectroscopic ellipsometry were employed to study the optical properties of the SiCxNy films. For electrical measurements, Al gate electrodes were fabricated on SiCxNy films to form metal-nitride-silicon (MNS) diodes. Characteristic I-V and photoconductivity measurements of the MNS are presented.Capacitance;Current voltage characteristics;Deposition;Dielectric materials;Ellipsometry;MIS devices;Semiconducting silicon compounds;Sputter deposition;Structure (composition);Surface roughness;Thin films;Ion beam sputter deposition (IBD);Silicon carbon nitrides;Ultraviolet-visible transmittances;Semiconducting filmsconference paper2-s2.0-0034505573