Atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf> on GaN: A comparative study on interfaces and electrical characteristics

Chang, Y.C.Y.C.ChangHuang, M.L.M.L.HuangChang, Y.H.Y.H.ChangLee, Y.J.Y.J.LeeChiu, H.C.H.C.ChiuKwo, J.J.KwoMINGHWEI HONG2019-12-272019-12-272011https://scholars.lib.ntu.edu.tw/handle/123456789/443358Atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and HfO<inf>2</inf> on GaN: A comparative study on interfaces and electrical characteristicsconference paper10.1016/j.mee.2011.03.0982-s2.0-79958026432https://www.scopus.com/inward/record.uri?eid=2-s2.0-79958026432&doi=10.1016%2fj.mee.2011.03.098&partnerID=40&md5=29f70c9577a23840a3b0f86ff6836ffa