Self-aligned inversion channel In<inf>0.53</inf>Ga<inf>0.47</inf>As N-MOSFETs with ALD-Al<inf>2</inf>O<inf>3</inf>and MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics

Chiu, H.C.H.C.ChiuLin, T.D.T.D.LinChang, P.P.ChangLee, W.C.W.C.LeeChiang, C.H.C.H.ChiangKwo, J.J.KwoLin, Y.S.Y.S.LinHsu, S.S.H.S.S.H.HsuTsai, W.W.TsaiMINGHWEI HONG2019-12-272019-12-272009https://scholars.lib.ntu.edu.tw/handle/123456789/443399Self-aligned inversion channel In<inf>0.53</inf>Ga<inf>0.47</inf>As N-MOSFETs with ALD-Al<inf>2</inf>O<inf>3</inf>and MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectricsconference paper10.1109/VTSA.2009.51593292-s2.0-77950103851https://www.scopus.com/inward/record.uri?eid=2-s2.0-77950103851&doi=10.1109%2fVTSA.2009.5159329&partnerID=40&md5=b5b6abfa3a58f14b92fa547d674c41ce