Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnOSi O2 thin films on top of the p-GaN heterostructure

Chen, C.P.C.P.ChenKe, M.Y.M.Y.KeLiu, C.C.C.C.LiuChang, Y.J.Y.J.ChangYang, F.H.F.H.YangJIAN-JANG HUANG2020-06-112020-06-112007https://www.scopus.com/inward/record.uri?eid=2-s2.0-34548426550&doi=10.1063%2f1.2777175&partnerID=40&md5=49be9c8846bddff4fdb0127f9b5ca73cThe authors report on the 394 nm UV light emission from low-temperature sputtered n-ZnOSi O2 thin films on top of the p-GaN heterostructure. They compare samples with and without a Si O2 current blocking layer. With a Si O2 layer, electroluminescence spectrum shows a sharp emission peak at 394 nm, which is attributed to the recombination of accumulated carriers between n-ZnOSi O2 and p-GaNSi O2 junctions. As for the sample without a Si O2 layer, a broadband ranging from 400 to 800 nm is observed, which is due to Mg+ deep-level transition in the GaN along with defects in the ZnO layers. © 2007 American Institute of Physics.Defects; Electroluminescence; Gallium nitride; Heterojunctions; Light emission; Low temperature effects; Semiconducting zinc compounds; Current blocking layers; Recombination; Thin filmsObservation of 394 nm electroluminescence from low-temperature sputtered n-ZnOSi O2 thin films on top of the p-GaN heterostructurejournal article10.1063/1.27771752-s2.0-34548426550