Low contact resistivity (1.5×10-8 Ω-cm2) of phosphorus-doped Ge by in-situ chemical vapor deposition doping and laser annealing

Huang, S.-H.S.-H.HuangLu, F.-L.F.-L.LuCHEE-WEE LIU2018-09-102018-09-102016http://www.scopus.com/inward/record.url?eid=2-s2.0-84978682964&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/396629Low contact resistivity (1.5×10-8 Ω-cm2) of phosphorus-doped Ge by in-situ chemical vapor deposition doping and laser annealingconference paper10.1109/VLSI-TSA.2016.7480526