Controlled placement and electrical contact properties of individual multiwalled carbon nanotubes on patterned silicon chips

Y. F. HsiouL. StobinskiWatson KuoC. D. ChenYING-JAY YANG2018-09-102018-09-102004-0200036951http://scholars.lib.ntu.edu.tw/handle/123456789/310927https://www.scopus.com/inward/record.uri?eid=2-s2.0-1542276783&doi=10.1063%2f1.1645985&partnerID=40&md5=145b44141788313c94734514b04fdd58A reliable method for synthesis and controlled placement of MWNTs is presented. It is shown that Cr is a good candidate for contact material. It provides low Ohmic contact resistance with weak temperature and magnetic-field dependences.Chemical vapor deposition; Chromium; Crystal growth; Current voltage characteristics; Electric properties; Electrodes; Electron beam lithography; Energy gap; Magnetic field effects; Scanning electron microscopy; Silicon; Thermal effects; Multiwalled carbon nanotubes; Patterned silicon chips; Carbon nanotubesControlled placement and electrical contact properties of individual multiwalled carbon nanotubes on patterned silicon chipsjournal article10.1063/1.16459852-s2.0-1542276783WOS:000188763800050