The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm ≦ t ≦10 nm) grown by GSMBE

Lin, Yo-ShengYo-ShengLinLu, Shey-ShiShey-ShiLu2007-04-192018-07-062007-04-192018-07-061996http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910031963/1/00557478.pdfThe effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm ≦ t ≦10 nm) grown by GSMBEjournal article10.1109/SMICND.1996.557478http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910031963/1/00557478.pdf