Yu-Hsuan ChiangSHEN-IUAN LIU2018-09-102018-09-102013-1215497747http://scholars.lib.ntu.edu.tw/handle/123456789/381453https://www.scopus.com/inward/record.uri?eid=2-s2.0-84890858541&doi=10.1109%2fTCSII.2013.2281920&partnerID=40&md5=dbe01252dd94a06f88b5358b81db76bdA 1.1-MHz submicrowatt current-mode relaxation oscillator with temperature compensation is presented. In this oscillator, the current-starving inverters are biased by using the current sources with positive and negative temperature coefficients. It relaxes the temperature variations. This oscillator is fabricated in a 0.18-μm CMOS process, and its area is 0.075 mm2. The power consumption is 0.859 μW, with a supply voltage of 1.8 V, and the calculated figure of merit is 0.78 nW/kHz. The measured output relative frequency variation is less than 3%/V for the supply voltage of 1.2-2.4 V and ±0.5% for the temperature of-20 °C-80 °C. The average temperature coefficient is 64.3 ppm/°C. © 2004-2012 IEEE.Low power; relaxation oscillator; subthreshold; temperature coefficient[SDGs]SDG7CMOS integrated circuits; Temperature distribution; CMOS relaxation oscillators; Figure of merits; Low Power; Relative frequencies; Subthreshold; Temperature coefficient; Temperature compensation; Temperature variation; Relaxation oscillatorsA submicrowatt 1.1-MHz CMOS relaxation oscillator with temperature compensationjournal article10.1109/tcsii.2013.22819202-s2.0-84890858541WOS:000328704300004