CHEE-WEE LIUKuo, P.-S.P.-S.KuoPeng, C.-Y.C.-Y.PengLee, C.-H.C.-H.LeeShen, Y.-Y.Y.-Y.ShenChang, H.-C.H.-C.ChangCHEE-WEE LIU2018-09-102018-09-102009http://www.scopus.com/inward/record.url?eid=2-s2.0-62549160419&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/350478The hole confinement due to the valence band offset of the Si/SiGe/Si quantum well causes the shrinkage of depletion region for the n-type Si/Si0.2Ge0.8/Si Schottky barrier diodes with Pt gates. The capacitance of Si/Si0.2Ge0.8/Si Schottky diodes has approximately two times the capacitance of the control Si device. Moreover, the high electrical field leads to a high thermionic-field emission current and a large image-force lowering at both reverse and forward biases. The conventional capacitor-voltage method cannot be used to accurately measure the barrier height of Si/SiGe/Si quantum well Schottky diodes due to the shrinkage of depletion region.[SDGs]SDG7journal article10.1063/1.3099337