Weak localization and electron-electron interaction effects in Al 0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substrates

Chen, K.Y.K.Y.ChenCHI-TE LIANGChen, N.C.N.C.ChenChang, P.H.P.H.ChangChang, C.-A.C.-A.Chang2018-09-102018-09-102007http://www.scopus.com/inward/record.url?eid=2-s2.0-37749033965&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/330961Weak localization and electron-electron interaction effects in Al 0.15Ga0.85N/GaN high electron mobility transistor structures grown on p-type Si substratesjournal article2-s2.0-37749033965