Effects of array type of dummy active diffused region and gate geometries on narrow NMOSFETs with SiC S/D stressors

Lee, C.-C.C.-C.LeeHsieh, C.-P.C.-P.HsiehLiao, M.-H.M.-H.LiaoCheng, S.-W.S.-W.ChengGuo, Y.-H.Y.-H.Guo2019-03-112019-03-112016https://scholars.lib.ntu.edu.tw/handle/123456789/404509Effects of array type of dummy active diffused region and gate geometries on narrow NMOSFETs with SiC S/D stressorsconference paper10.1109/INEC.2014.74604192-s2.0-84971276066