Chou Y.-PSI-CHEN LEE2023-06-092023-06-091999381098https://www.scopus.com/inward/record.uri?eid=2-s2.0-0002680485&doi=10.1016%2fs0038-1098%2899%2900443-3&partnerID=40&md5=846e688cbfc12db6bd3a8bf1f120fcdchttps://scholars.lib.ntu.edu.tw/handle/123456789/632329Hydrogenated amorphous germanium alloys (a-Ge:H) have been prepared by plasma enhanced chemical vapor deposition at a substrate temperature of 200°C. The films tend to oxidize as soon as they are taken out from the chamber and exposed to air. The oxidation process is found to follow a percolation channel formed by a continuous linkage of large voids that is evidenced by the observation of the decline of the intensity of Ge-H stretching mode at 1980 cm-1 to zero while the other peak at 1890 cm-1 does not change. This means that the peak at 1980 cm-1 corresponds to the Ge-H stretching mode in large voids while that at 1890 cm-1 corresponds to Ge-H stretching mode in isolated small voids. Thus, the frequency shifts of the stretching mode should arise from the difference of the void size where Ge-H bonds are situated. © 1999 Elsevier Science Ltd. All rights reserved.A. Disordered systems; A. Semiconductors; A. Thin films[SDGs]SDG6Hydrogenation; Infrared radiation; Light absorption; Plasma enhanced chemical vapor deposition; Semiconducting germanium; Hydrogenated amorphous germanium alloys; Semiconducting filmsjournal article10.1016/s0038-1098(99)00443-32-s2.0-0002680485