Tsai, C.-W.C.-W.TsaiShmavonyan, G.Sh.G.Sh.ShmavonyanSu, Y.-S.Y.-S.SuCHING-FUH LIN2018-09-102018-09-1020030277786Xhttp://www.scopus.com/inward/record.url?eid=2-s2.0-84955166501&doi=10.1109/CLEOPR.2003.1274532&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/303191https://www.scopus.com/inward/record.uri?eid=2-s2.0-0242440839&doi=10.1117%2f12.474821&partnerID=40&md5=a6b7c301cd954ddc4197d126fc372a6bSuperluminescent diodes with broad emission bandwidth characteristics and the mechanism of carrier distribution in the active layer are explored. Asymmetric active layer structure is used for the broadband purpose. Using InP substrate with five 60Å InGaAsP quantum wells and two 150Å InGaAs quantum wells, we get a very broad emission spectrum. The spectral width is nearly 400nm, almost covering the range from 1250nm to 1650nm.Asymmetric multiple quantum wells; Bent waveguide; Broadband; Superluminescent diodes[SDGs]SDG7Bandwidth; Optical communication; Optical fibers; Semiconducting indium phosphide; Semiconductor lasers; Semiconductor quantum wells; Superluminescent diodes (SLD); Light amplifiersconference paper10.1117/12.4748212-s2.0-0242440839